smd type ic www.kexin.com.cn 1 smd type transistors features low collector-emitter saturation voltage v ce(sat) satisfactory operation performances at high efficiency with the lowvoltage power supply. h fe classification rank q r h fe 230 380 340 600 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 5v collector current i c 3a peak collector current i cp 7a collector power dissipation p c 0.5 w junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter breakdown voltage v ceo i c =1ma,i b =0 20 v emitter-base breakdown voltage v ebo i e =10a,i c =0 5 v collector-base cutoff current i cbo v cb =10v,i e =0 0.1 a collector-emitter cutoff current i ceo v ce =10v,i b =0 1 a emitter-base cutoff current i ebo v eb =5v,i c =0 0.1 a v ce =2v,i c = 0.5 a 230 600 v ce =2v,i c = 1 a 150 collector-emitter saturation voltage v ce(sat) i c =2a,i b = 0.1 a 0.28 1.00 v collector output capacitance c ob v cb =20v,i e = 0, f = 1 mhz 26 50 pf transition frequency f t v cb =6v,i e = -50 ma, f = 200 mhz 150 mhz forward current transfer ratio h fe silicon npn epitaxial planar type 2SD965K
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